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Beilstein J. Nanotechnol. 2016, 7, 1727–1735, doi:10.3762/bjnano.7.165
Figure 1: Formation and quenching of NV centres. (a) PL-intensity mapping performed on the diamond surface wh...
Figure 2: In-plane Schottky diode from diamond. (a) Schematic figure of an in-plane Al Schottky diode on an H...
Figure 3: Active charge state control of a single NV centre. At zero bias there is only a PL-background of th...
Figure 4: Schematic setup for time-resolved measurement of NV-intensity. To record the time evolution of the ...
Figure 5: Fast charge state switching. The result of the time-resolved NV-intensity measurement shows that sw...
Figure 6: Time constant for charge state switching. Time constants deduced from fitting an exponential functi...
Figure 7: Degradation effect. After several 1000 switching cycles, the measured time constants for dischargin...
Figure 8: Simultaneous measurement of NV− and NV0 intensity. A time-resolved measurement of NV− (red curve) a...